Dual SiC MOSFET modules are rated at 2200V and designed by Toshiba Electronics Europe as an SiC MOSFET with embedded Schottky barrier diode (SBD). The modules are suitable for use in 1500V DC applications such as photovoltaic (PV) inverters, electric vehicle (EV) chargers, high frequency DC/DC converters and energy storage systems. According to Toshiba, they […]
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