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650V E series power MOSFETs slash on-resistance, says Vishay Intertechnology 

The fourth generation 650V E series power MOSFETs are claimed to have the industry’s lowest RDS(ON)*Qg and RDS(ON)*Co(er) figure of merits as well as reducing on-resistance by 48.2 per cent compared to previous generation devices. The Vishay Siliconix n-channel SiHP054N65E MOSFETs are suitable for high efficiency and power density applications such as telecomms, industrial, and […]

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