Bi-GaN bi-directional GaN HEMTs save space, increase efficiency  

According to Innoscience Technology, the bi-GaN series of bi-directional GaN HEMT devices saves space and facilitates fast charging without risk of reliability-limiting and dangerous rises in temperature. Both of these effects can sometimes be seen in traditional silicon devices when fast charging, said the company.  The bi-GaN devices can be used inside phone handsets to […]

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