E-mode GAN fets are suitable for both low- and high-voltage applications

Nexperia has released its first power GaN fets in e-mode (enhancement mode) configuration for low (100/150V) and high (650V) voltage applications. By augmenting its cascode offering with seven e-mode devices, Nexperia now provides  a choice of GaN fets. Nexperia’s portfolio includes five 650V rated e-mode GaN fets (with RDS(on) values between 80 mOhm and 190 […]

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