Designed to drive high voltage power devices such as IGBTs (insulated gate bipolar transistors) and SiC (silicon carbide) MOSFETs for electric vehicle (EV) inverters, the RAJ2930004AGM has been released by Renesas Electronics. It supports 1200V power devices with 3.75kV rms in isolation voltage. Renesas explained that gate driver ICs provide an interface between the inverter […]
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