A third generation process technology has been used by Toshiba Electronics Europe for 12 650V SiC Schottky barrier diodes (SBDs). They have forward voltage of 1.2V and are specifically intended for use in efficiency-critical industrial equipment applications including switching power supplies, electric vehicle (EV) charging stations and photovoltaic (PV) inverters. The TRSxxx65H series devices use […]
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