Source-down package for Infineon’s OptiMOS reduces parasitic effects

Now available from distributor, Rutronik, Infineon Technologies’ OptiMOS power MOSFETs are in an improved package design. The 25 to 150V power MOSFETs are available in a source-down package with bottom-side cooling and centre-gate footprint. They have been optimised especially for applications where parallel connection is necessary and have the lowest possible on-resistance RDS(on) on a […]

The post Source-down package for Infineon’s OptiMOS reduces parasitic effects appeared first on Softei.com – Global Electronics Industry News.