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ST breaks the 20nm barrier for next-generation microcontrollers

ST has announced an advanced process based on 18nm Fully Depleted Silicon On Insulator (FD-SOI) technology with embedded phase change memory (ePCM) to support next-generation embedded processing devices. This new process technology, co-developed by ST and Samsung Foundry, delivers a leap in performance and power consumption for embedded processing applications while allowing larger memory sizes […]

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