Innoscience capitalises on GaN on silicon to produce 650V GaN HEMTs

Low RDS(on) GaN HEMT devices by Innoscience are supplied in industry-standard packages and are very cost-competitive, said the company. The 650V E-mode INN650D080BS power transistors devices have an on-resistance of 80mOhm (60mOhm typical) in a standard 8×8 DFN package. According to Innoscience, they  enable higher power applications, for example in totem pole LLC architectures or […]

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