Two automotive-grade 40V N-channel power MOSFETs have been released by Toshiba for next-generation vehicle designs. The XPQR3004PB and XPQ1R004PB use the large transistor outline gull-wing leads package format or L-TOGLTM to improve heat dissipation. The MOSFETs are optimised for handling large currents, said Toshiba. They each feature high drain current ratings (400A for the XPQR3004PB […]
The post N-channel power MOSFETs exploit heat dissipation to support next-gen vehicles appeared first on Softei.com – Global Electronics Industry News.
Read More
Softei.com – Global Electronics Industry News