Fast-switching mosfets and half-bridge power integrated modules claim industry’s lowest Rds(on) per switch position

The latest generation of onsemi 1200V EliteSiC silicon carbide (SiC) M3S devices will enable power electronics designers to achieve best-in-class efficiency and lower system cost, claimed the company. The new portfolio includes EliteSiC mosfets and modules that facilitate higher switching speeds to support the growing number of 800V electric vehicle (EV) on-board charger (OBC) and […]

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