Infineon introduces CoolSiC MOSFET G2, the next generation of silicon carbide technology

Infineon opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20 percent compared to the previous […]

The post Infineon introduces CoolSiC MOSFET G2, the next generation of silicon carbide technology appeared first on Softei.com – Global Electronics Industry News.

Read More
Softei.com – Global Electronics Industry News

Scroll to Top