Infineon has officially opened the first phase of a new fab in Malaysia that will become the world’s largest 200-millimetre silicon carbide (SiC) power semiconductor fab. The first phase of the fab will focus on the production of silicon carbide power semiconductors and will include gallium nitride (GaN) epitaxy. SiC semiconductors have revolutionised high-power applications […]
The post Infineon opens the world’s largest SiC power semiconductor fab in Malaysia appeared first on Softei.com – Global Electronics Industry News.
Read More
Softei.com – Global Electronics Industry News
