Navitas breaks barriers with half-bridge GaN power ICs

Two GaN FETs are integrated in the GaNSense half bridge power ICs by Navitas. The next generation GaN device delivers MHz performance with over 60 per cent reduction in components and circuit size, claimed the company. In addition to achieving MHz switching frequencies, they also reduce system cost and complexity compared to existing discrete devices, […]

The post Navitas breaks barriers with half-bridge GaN power ICs appeared first on Softei.com – Global Electronics Industry News.