New generation of eGaN technology claims to double performance 

Efficient Power Conversion (EPC’s) 80.0V, 4 mOhm EPC2619 GaN fet in tiny 1.5×2.5mm footprint offers higher performance and smaller solution size than traditional mosfets for high power density applications, including DC-DC conversion, motor drives, and synchronous rectification for 12.0- 20.0V. This is the lead product for a new generation of eGaN devices that the company […]

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