Nexperia’s first SiC MOSFETs raise the bar for safe, robust and reliable power switching

Nexperia have announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. NSF040120L3A0 and NSF080120L3A0 are the first in a series of planned releases which will see Nexperia’s SiC MOSFET portfolio quickly expand to include devices […]

The post Nexperia’s first SiC MOSFETs raise the bar for safe, robust and reliable power switching appeared first on Softei.com – Global Electronics Industry News.