ST’s MasterGaN1L and MasterGaN4L introduce the next generation of integrated gallium-nitride (GaN) bridge devices that simplify power-supply design leveraging wide-bandgap technology to achieve the latest ecodesign targets. ST’s MasterGaN family combines 650V GaN high electron-mobility transistors (HEMT) with optimised gate drivers, system protection, and an integrated bootstrap diode that helps power the device at startup. […]
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