Five 1200V silicon carbide (SiC) MOSFETs released by Toshiba leverage the company’s third generation SiC technology, claimed to boost the energy efficiency of high voltage industrial applications. The TW015N120C, TW030N120C, TW045N120C, TW060N120C, and TW140N120C are designed for use in equipment such as electric vehicle (EV) charging stations, photovoltaic (PV) inverters, industrial power supplies, uninterruptible power […]
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