According to Innoscience Technology, the bi-GaN series of bi-directional GaN HEMT devices saves space and facilitates fast charging without risk of reliability-limiting and dangerous rises in temperature. Both of these effects can sometimes be seen in traditional silicon devices when fast charging, said the company. The bi-GaN devices can be used inside phone handsets to […]
The post Bi-GaN bi-directional GaN HEMTs save space, increase efficiency appeared first on Softei.com – Global Electronics Industry News.
Softei.com – Global Electronics Industry News